Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: ROHM R6011ENJTL Power Field Effect Transistor, MOSFET, N-channel, 11 A, 600 V, 0.34 ohm, 10 V, 4 V New7681Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON SPB17N80C3ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 17 A, 800 V, 0.25 ohm, 10 V, 3 V1514Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STB28N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V new1362Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STB33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V new4939Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHB33N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 33A, TO-263-32299Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R099C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V3290Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R380C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V9693Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R299CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 11 A, 650 V, 0.27 ohm, 10 V, 3 V7464Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R199CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 16 A, 650 V, 0.18 ohm, 10 V, 3 V7674Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB65R660CFDATMA1 Power Field Effect Transistor, MOSFET, N-channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V8845Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: ROHM R6007ENJTL Power Field Effect Transistor, MOSFET, N-channel, 7 A, 600 V, 0.57 ohm, 10 V, 4 V New4466Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: ROHM R6011KNJTL Power Field Effect Transistor, MOSFET, N-channel, 11 A, 600 V, 0.34 ohm, 10 V, 5 V New7289Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: ROHM R6007KNJTL Power Field Effect Transistor, MOSFET, N-channel, 7 A, 600 V, 0.57 ohm, 10 V, 5 V New7751Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R099CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 31 A, 650 V, 0.09 ohm, 10 V, 3 V1122Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB070N65S3 功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V 新5567Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB65R110CFDATMA1 功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V2572Get WhatsApp QuoteBOM Quote
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Category: Medium high voltage MOS transistorDescription: ROHM R6024ENJTL 功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V 新6467Get WhatsApp QuoteBOM Quote
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